摘要:
本文基于k·p理论框架,分析了单轴应力对导带能带结构的影响,详细讨论了剪切应力作用下布里渊区边界X点处△1和△2,能带之间的耦合作用及其对导带能谷极小值的改变,由此进一步给出了能谷极值点附近的色散关系.最后通过不同能谷之间的坐标变换,得到了任意单轴应力作用下每个能谷的色散关系.本文的研究可以为单轴应变Si材料物理性质的理解以及对反型层能带结构、电学特性的相关研究提供一定的理论参考.
Abstract:
In this paper, based on the framework of k.p method, the influence of uniaxial stress on the conduction band energy-band structure of bulk-Si is analysed first, the coupling of A1 and A2, bands at the X point, and the influence of that band-band coupling on the minimum of energy valley are then separately discussed under the action of shear strain. On that basis, the dispersion relation close to the minimum is obtained. Furthermore, the different valley orientations need to be taken into account. Using the coordinate transformation, the modelling for dispersion relation of each valley with arbitrary uniaxial stress is finally achieved. The proposed analytical model in this paper is also suited to the understanding of the physical properties of uniaxial strained Si material and may provide some references for the study on bandstructure and electrical properties of the inversion layer in uniaxial strained Si nMOSFETs.
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