摘要:
基于金属-氧化物-半导体-场效应管（MOSFET）辐射损伤的微观机理,推导出了MOSFET经历辐照之后氧化层空穴俘获与阈值电压漂移之间关系的表达式.又根据MOSFET中1/f噪声产生的微观机理,建立了辐照之前MOSFET的1/f噪声功率谱幅值与阈值电压漂移量之间的定量关系,并通过实验予以验证.结果表明,辐照之前的1/f噪声功率谱幅值与辐照之后的阈值电压漂移量存在正比例关系,阈值电压漂移量可以反映出MOSFET内部的潜在缺陷的退化程度,因此,该模型有助于利用1/f噪声参量来表征MOSFET内部潜在缺陷的数量和严重程度.
Abstract:
Based on metal-oxide-semiconductor field effect transistor（MOSFET） microscopic mechanism of radiation damage,a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed.Then,Based on MOSFET microscopic mechanism of 1/f noise generation,a quantitative relationship between pre-irradiation 1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded,which accords well with the experimental results.This relationship shows that pre-irradiation 1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET.So,this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using 1/f noise parameters.
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