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He＋辐照对Ga_（0.94）Mn_（0.06）As薄膜铁磁性的改善
Amending the ferromagnetic properties of Ga_（0.94）Mn_（0.06）As films by He~＋ irradiation
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摘要: 离子辐照半导体可以很好的改善半导体材料的磁学性质.用He~＋辐照Ga_（0.94）Mn_（0.06）As薄膜,可以较方便的调制Ga_（0.94）Mn_（0.06）As薄膜中产生铁磁性载体的浓度.由于空穴居间而导致Ga_（0.94）Mn_（0.06）As薄膜的铁磁性,可以通过He~＋的辐照来得到改善,其结果是Ga_（0.94）Mn_（0.06）As薄膜的矫顽力可以增加3倍多.当He~＋辐照流强增加时,居里温度和沿着样品面外磁化难轴方向的饱和磁场都减小了.被辐照的Ga_（0.94）Mn_（0.06）As薄膜的电学性质和结构特征显示,He~＋辐照Ga_（0.94）Mn_（0.06）As薄膜可以有控制地改善它的铁磁性,其结果源于He~＋辐照Ga_（0.94）Mn_（0.06）As薄膜所诱导产生电缺陷对空穴的补偿,而不是He~＋辐照改变了Ga_（0.94）Mn_（0.06）As薄膜的结构.Abstract: Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner.We show that the ferromagnetism in Ga_（0.94）Mn_（0.06）As films,known to be hole-mediated,can be modified by He ion irradiation.The coercivity can be increased by more than three times.The magnetization,Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases.The electrical and structural characterization of the irradiated Ga_（0.94）Mn_（0.06）As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.
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