首页
登录
注册
N型掺杂应变Ge发光性质
The optical property of tensile-strained n-type doped Ge
-
摘要: 应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于van de Walle形变势理论,计算了应变情况下半导体Ge材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带问的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了N型掺杂张应变Ge材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强Ge材料直接带隙跃迁发光.在1.5%张应变条件下,N型掺杂Ge的最大内量子效率可以达到74.6%,光增益可以与Ⅲ-V族材料相比拟.Abstract: Tensile-strained germanium is one of the promsing materials for Si-based photonic devices due to its quasi-direct band and compatiblility with silicon technology.The band structure of tensile-strained germanium is investigated based on the theory of van de Walle deformed potential.The carrier distributions in the conduction bands at T and L vallies under the strain,and the n-type doping concentratoin in germanium are analyzed.Considering the competition between radiative recombinations atΓand L vallies and Auger recombination,as well as dislocation induced non-radiative recombination,internal quantum efficiency and optical gain for direct band transition in n-type Ge are calculated.It is shown that 74.6%internal quantum efficiency can be obtained in the 1.5%tensile-strained n-type doped Ge under carrier injection and a strong optical gain is predicted,which is comparable to those ofⅢ-Ⅴmaterials.
-
-
计量
- 文章访问数: 971
- HTML全文浏览数: 175
- PDF下载数: 0
- 施引文献: 0
下载: