硅基二维平板光子晶体高Q微腔的制作和光谱测量

物理学报

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周长柱, 王晨, 李志远. 2012: 硅基二维平板光子晶体高Q微腔的制作和光谱测量, 物理学报, 61(1): 223-227.

引用本文:

周长柱, 王晨, 李志远. 2012: 硅基二维平板光子晶体高Q微腔的制作和光谱测量, 物理学报, 61(1): 223-227.

2012: Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs, Acta Physica Sinica, 61(1): 223-227.

Citation:

2012: Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs, Acta Physica Sinica, 61(1): 223-227.

Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs

摘要: 利用微加工技术,在SOI上制作出了高Q值的光子晶体微腔,Q值可以达7×10~4以上,为后续的光与物质相互作用和量子信息方面的实验奠定了基础.实验结果与理论模拟符合得较好.通过三维时域有限差分法模拟,得到光子晶体微腔的Q值为1.2×10~5左右.
- 光子晶体 /
- 微腔 /
- 微加工
Abstract: We fabricate a high Q photonic crystal cavity on the top of SOI（sihcon on insulator） with EBL（electron beam lithography） and ICP（inductively coupled plasma）.The value of Q can reach 7×10~4.It provides basic condition for the following experiments,for example for the study of interaction between light and substance.The high Q cavity also provides good circumstance for the quantum information.The theoretical result of the value of Q is 1.2×10~5 from FDTD（finite difference time domain） simulation.