摘要:
在商用0.35μm互补金属氧化物半导体工艺上制备了两种栅氧化层厚度（t_（ox））的条形栅、环形栅和半环形栅N沟道金属氧化物半导体（n-channel metal oxide semiconductor,简记为NMOS）晶体管,并进行了2000 Gy（Si）的总剂量辐射效应实验.实验结果显示,栅氧厚度对阈值电压漂移的影响大于栅氧厚度的3次方.对于t_（ox）为11 nm的低压NMOS晶体管,通过环形栅或半环形栅的加固方式能将其抗总剂量辐射能力从300 Gy（Si）提高到2000 Gy（Si）以上;而对于t_（ox）为26 nm的高压NMOS晶体管,通过环栅或半环栅的加固方式,则只能在低于1000 Gy（Si）的总剂量下,一定程度地抑制截止漏电流的增加.作为两种不同的版图加固方式,环形栅和半环形栅对同一t_（ox）的NMOS器件加固效果类似,环形栅的加固效果略优于半环形栅.对于上述实验结果,进行了理论分析并阐释了产生这些现象的原因.
关键词:
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环形栅
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半环形栅
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总剂量
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辐射效应
Abstract:
Two-edged-gate,annular-gate and ring-gate N-channel metal oxide semiconductor（NMOS） transistors with two different values of gate oxide thickness（t_（ox）） are fabricated in a commercial 0.35μm complementary metal oxide semiconductor（CMOS） process.The tests for the total ionizing dose（TID） effects of the transistors are carried out with a total dose up to 2000 Gy（Si）.The results show that the dependence of radiation-induced threshold voltage shift on t_（ox） is larger than the power-law t_（ox）~3.The TID tolerance of the low voltage NMOS（t_（ox） = 11 nm） is improved from 300 Gy（Si） to over 2000 Gy（Si） by the annular-gate or ring-gate layout.For the high voltage NMOS（t_（ox） = 26 nm）,the annular-gate or ring-gate layout can only mitigate the growth of the off-state leakage current when the total dose is less than 1000 Gy（Si）.As radiation hardening techniques,the annular-gate and ring-gate layouts have similar effects, but the annular-gate layout is slightly more effective in terms of the radiation-induced threshold voltage shift and off-state leakage current increase.The test results are theoretically explained by examining and analyzing the experimental data.
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