CuI/Al双层电极的有机场效应晶体管
Organic field-effect transistor with low-cost CuI/Al bilayer electrode
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摘要: 制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al,Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.
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关键词:
- 有机场效应晶体管 /
- CuI/Al双层源漏电极 /
- 电子转移
Abstract: An organic field-effect transistor based on pentacene semiconductor with CuI/Al bilayer electrode is investigated.The CuI layer,directly contacting the organic semiconductor layer,serves as the hole-injection layer.The overcoated metal layer is responsible for the reduction in contact barrier.Compared with the device with a single metal (Al,Au) layer used as the source-drain electrode,the device with CuI/Al electrodes considerably improves the hole mobility and the on/off current ratio and greatly reduces the threshold voltage.Results of X-ray photoelectron and ultraviolet/visible absorption studies reveal that the reduction in the contact barrier can be attributed to an electron transfer from pentacene and Al to CuI. -
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