Keywords: 
• InAlN/GaN /
• 脉冲金属有机物化学气相淀积 /
• 二维电子气 /
• 迁移率

Abstract: InAlN can be in-plane lattice matched （LM） to GaN,and the formed InAlN/GaN heterostructure is one kind of materials with high conductivity to be used in GaN-based high electron mobility transistors （HEMTs）.It is reported that the high-mobility InAlN/GaN material is grown by using pulsed metal organic chemical vapor deposition （PMOCVD） on sapphire,and the Hall electron mobility reaches 949 and 2032 cm2/Vs at room temperature and 77 K,respectively.The two-dimensional electron gas （2DEG） is formed in the sample.When 1.2 nm thick AlN space layer is inserted to form InAlN/AlN/GaN structure,the Hall electron mobility increases to 1437 and 5308 cm2/Vs at room temperature and 77 K,respectively.It is shown by analyzing the results of X-ray diffraction and atomic force microscopy and the features of PMOCVD that the crystal quality of InAlN/GaN material is quite high,and the InAlN layer LM to GaN has smooth surface and interface.The high mobility characteristics of InAlN/GaN and InAlN/AlN/GaN materials are ascribed to the fact that the 2DEG has a comparatively low sheet density （1.6×1013—1.8×1013 cm-2）,the alloy disorder scattering is weakened in the high-quality InAlN crystal since its compositions are evenly distributed,and the interface roughness scattering is alleviated at the smooth interface where the 2DEG is located.