摘要:
本文基于量子机制建立了单轴应变硅nMOSFET栅隧穿电流模型,分析了隧穿电流与器件结构参数、偏置电压及应力的关系.仿真分析结果与单轴应变硅nMOSFET的实验结果符合较好,表明该模型可行.同时与具有相同条件的双轴应变硅nMOSFET的实验结果相比,隧穿电流更小,从而表明单轴应变硅器件更具有优势.该模型物理机理明确,不仅适用于单轴应变硅nMOSFET,只要将相关的参数置换,该模型也同样适用于单轴应变硅pMOSFETs.
Abstract:
Based on quantum mechanics, a tunneling current of uniaxially strained Si nMOSFET is bulit. The relationships between the tunneling current and device structure parameter, biased voltage and stress are analyzed. The simulation result is shown to accord well with the reported experimentalal result, implying that our model is correct. Our result is also compared with the result of biaxially stressed silicon nMOSFET, which shows that the current of uniaxially straining Si nMOSFET is lower than that of biaxially stressed silicon nMOSFET, and so uniaxial devices have advantages over biaxial devices. The model has a definite physical mechanism and it is suitable not only for uniaxially strained Si nMOSFET, but also for uniaxially strained Si pMOSFET,as long as changing the relevant parameters.
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