摘要:
借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3mm×0.2mm,直径和长度分布均匀,平均直径约为41nm,平均长度为1.8μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线宏观阵列方法.
Abstract:
AlN nanowire macro-arrays are successfully synthesized and characterized by the second template method. In the article we mainly research the process of preparing the AlN nanowire macro-arrays each with a certain orientation and uniform diameter by the chemical vapor deposition （CVD） method. Metal nanoparticles are prepared by CVD and self-assembled PS sphere templates, and then AlN nanowires macro arrays are compounded by the CVD on template and the metal nanoparticles on the template as a catalyst. The samples are observed by SEM and TEM, AlN nanowire macro-arrays have an area of about 0.3 mm×0.2 mm, they are well distributed, and have an average diameter of about 41 nm, an average length of about 1.8μm, distributed density and coverage of large macro-hexagonal AlN nanowire arrays. So a method to controllably prepare AIN macroscopic nanowire arrays is obtained.
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