Keywords: 
• 表面等离子体共振 /
• 复合薄膜

Abstract: Ag/ZnO bilayer thin films are fabricated on Si substrates via two-step approach of ＂ZnO sputtering＋ Ag evaporation＂.The enhancement of the near band edge （NBE） emission of the ZnO film is realized through coupling between the surface plasmon resonating energy at Ag/ZnO interface and the photonic energy of ZnO NBE emission.The dependence of the emission enhancement ratio η of ZnO on the thickness and the growth temperature T of Ag cap-layers are investigated.By evaporating Ag（8 nm） cap-layer onto ZnO（100 nm） film at high substrate temperatures （T≥300℃）,the η value reaches about 18,i.e.,η≈18,which is more than twice that of Ag（8 nm）/ZnO（100 nm） bilayer films grown at low temperatures （T≤200℃）.It is found that the realization of the larger η can be ascribed to the bigger surface roughness of Ag/ZnO bilayer samples prepared under higher growth temperatures.