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纳米折叠InGaN／GaNLED材料生长及器件特性
Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED
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摘要: 在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上，利用MOCVD方法外延生长了具有折叠InGaN／GaN多量子阱（MQW）的LED结构外延片，进而制作了LED器件．外延片上中下游的光致荧光测试，结果表明外延片具有很好的均匀性．用该外延片制作的LED的电致发光谱，随注入电流增加没有明显蓝移，这表明纳米结构能更好地释放应力，纳米柱上外延生长的多量子阱，具有较低的压电极化电场．正向工作电流20mA时，LED器件的工作电压为4．6V．Abstract: GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells （MQWs） are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence （PL） spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence （EL） spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect （QCSE） and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.
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