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AIGaN／GaN高速电子迁移率晶体管器件电流坍塌效应与界面热阻和温度的研究
Current collapse effect, interfacial thermal resistance and work temperature for AIGaN/GaN HEMTs
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摘要: 本文系统研究了A1GaN／GaN基高速电子迁移率晶体管器件界面热阻和工作温度对器件在高功率下的电流坍塌效应的影响规律．研究发现低漏极电压下热电子是导致负微分输出电导的重要因素，器件工作温度变高会使负微分输出电导减小．高漏极电压下自加热效应是导致电流坍塌的一个重要因素．随着界面热阻的增加，器件跨导降低，阂值电压增大．同时，由于工作环境温度的增高，器件随之温度增高，载流子迁移率会显著降低．最终这两种因素会引起A1GaN／GaN基高速电子迁移率晶体管器件显著的电流坍塌效应，从而降低了器件整体性能．Abstract: The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two- dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.
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