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Si纳米线的固-液-固可控生长及其形成机理分析

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彭英才, 范志东, 白振华, 马蕾. 2010: Si纳米线的固-液-固可控生长及其形成机理分析, 物理学报, 59(2): 1169-1174.
引用本文: 彭英才, 范志东, 白振华, 马蕾. 2010: Si纳米线的固-液-固可控生长及其形成机理分析, 物理学报, 59(2): 1169-1174.
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Peng Ying-Cai, Fan Zhi-Dong, Bai Zhen-Hua, Ma Lei. 2010: Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism, Acta Physica Sinica, 59(2): 1169-1174.
Citation: Peng Ying-Cai, Fan Zhi-Dong, Bai Zhen-Hua, Ma Lei. 2010: Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism, Acta Physica Sinica, 59(2): 1169-1174.
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Si纳米线的固-液-固可控生长及其形成机理分析

  • 河北大学电子信息工程学院,保定,071002;中国科学院半导体研究所半导体材料科学重点实验室,北京,100083

  • 河北大学电子信息工程学院,保定,071002

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

  • 摘要: 以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30-60 nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N_2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.
    Abstract: High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N_2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.
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  • 刊出日期:  2010-02-28

Si纳米线的固-液-固可控生长及其形成机理分析

  • 河北大学电子信息工程学院,保定,071002;中国科学院半导体研究所半导体材料科学重点实验室,北京,100083
  • 河北大学电子信息工程学院,保定,071002

摘要: 以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30-60 nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N_2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.

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