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电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征

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赖延清, 匡三双, 刘芳洋, 张治安, 刘军, 李劼, 刘业翔. 2010: 电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征, 物理学报, 59(2): 1196-1201.
引用本文: 赖延清, 匡三双, 刘芳洋, 张治安, 刘军, 李劼, 刘业翔. 2010: 电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征, 物理学报, 59(2): 1196-1201.
shu
Lai Yan-Qing, Kuang San-Shuang, Liu Fang-Yang, Zhang Zhi-An, Liu Jun, Li Jie, Liu Ye-Xiang. 2010: Preparation and characterization of Cu (In, Ga) (Se, S)_2thin films by sulfurization of electrodeposited Cu (In, Ga) Se_2 precursors, Acta Physica Sinica, 59(2): 1196-1201.
Citation: Lai Yan-Qing, Kuang San-Shuang, Liu Fang-Yang, Zhang Zhi-An, Liu Jun, Li Jie, Liu Ye-Xiang. 2010: Preparation and characterization of Cu (In, Ga) (Se, S)_2thin films by sulfurization of electrodeposited Cu (In, Ga) Se_2 precursors, Acta Physica Sinica, 59(2): 1196-1201.
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电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征

  • 中南大学冶金科学与工程学院,长沙,410083

Preparation and characterization of Cu (In, Ga) (Se, S)_2thin films by sulfurization of electrodeposited Cu (In, Ga) Se_2 precursors

  • 摘要: 在550℃下的H_2S气氛中退火处理电沉积制备的Cu(In,Ga)Se_2(CIGS)预置层,制备了太阳电池光吸收层Cu(In,Ga)(Se,S)_2(CIGSS)薄膜.采用X射线能量色散谱、俄歇电子能谱、扫描电镜、X射线衍射和拉曼光谱对退火前后的薄膜进行表征.结果表明,H_2S气氛下退火能够实现薄膜中O的去除和S的掺入,同时使得各元素的纵向分布更加均匀并可消除Cu-Se微相.此外,H_2S退火还可改善薄膜的结晶性能,并使S和Ga进入黄铜矿结构,薄膜晶格参数变小.
    Abstract: The solar cell light absorber Cu (In, Ga) (Se, S)_2 (CIGSS) thin films were prepared by annealing the electrodeposited Cu(In,Ga)Se_2 (CIGS) precursors in H_2S ambient at 500℃ . The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H_2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure.
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  • 刊出日期:  2010-02-28

电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征

  • 中南大学冶金科学与工程学院,长沙,410083

摘要: 在550℃下的H_2S气氛中退火处理电沉积制备的Cu(In,Ga)Se_2(CIGS)预置层,制备了太阳电池光吸收层Cu(In,Ga)(Se,S)_2(CIGSS)薄膜.采用X射线能量色散谱、俄歇电子能谱、扫描电镜、X射线衍射和拉曼光谱对退火前后的薄膜进行表征.结果表明,H_2S气氛下退火能够实现薄膜中O的去除和S的掺入,同时使得各元素的纵向分布更加均匀并可消除Cu-Se微相.此外,H_2S退火还可改善薄膜的结晶性能,并使S和Ga进入黄铜矿结构,薄膜晶格参数变小.

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