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p型GaN低温粗化提高发光二极管特性

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邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地. 2010: p型GaN低温粗化提高发光二极管特性, 物理学报, 59(2): 1233-1236.
引用本文: 邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地. 2010: p型GaN低温粗化提高发光二极管特性, 物理学报, 59(2): 1233-1236.
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. 2010: Improved properties of light emitting diode by rough p-GaN grown at lower temperature, Acta Physica Sinica, 59(2): 1233-1236.
Citation: Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. 2010: Improved properties of light emitting diode by rough p-GaN grown at lower temperature, Acta Physica Sinica, 59(2): 1233-1236.
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p型GaN低温粗化提高发光二极管特性

  • 北京工业大学电子信息与控制工程学院,北京,100124

Improved properties of light emitting diode by rough p-GaN grown at lower temperature

  • 摘要: 利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP_2Mg)和三甲基镓(TMGa)物质的量比([CP_2Mg]/[TMGa])在1.4×10~(-3)-2.5×10~(-3)范围内,随[CP_2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP_2Mg]/[TMGa]为2.5×10~(-3)时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP_2Mg]/[TMGa]为2.5×10~(-3)的p型GaN层制备的发光二极管,在注入电流为20 mA时,输出光强提高了17.2%.
    Abstract: GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN : Mg materials were studied.When the molar ratio of CP_2 Mg and TMGa is between 1.4 × 10~(-3)and 2.5 × 10~(-3), the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly.When the molar ratio is 2.5×10~(-3), the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser.Taking the p-GaN layer with molar ratio of CP_2 Mg and TMGa of 2.5×10~(-3) as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.
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  • 刊出日期:  2010-02-28

p型GaN低温粗化提高发光二极管特性

  • 北京工业大学电子信息与控制工程学院,北京,100124

摘要: 利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP_2Mg)和三甲基镓(TMGa)物质的量比([CP_2Mg]/[TMGa])在1.4×10~(-3)-2.5×10~(-3)范围内,随[CP_2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP_2Mg]/[TMGa]为2.5×10~(-3)时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP_2Mg]/[TMGa]为2.5×10~(-3)的p型GaN层制备的发光二极管,在注入电流为20 mA时,输出光强提高了17.2%.

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