摘要:
采用离子束溅射技术交替沉积Sb-Te-Sb多层薄膜后进行高真空热处理,直接制备Sb_2Te_3薄膜.利用X射线衍射(XRD)仪、霍尔系数测试仪、薄膜Seebeck系数测量系统对所制备的薄膜特性进行表征.XRD测量结果显示,薄膜的主要衍射峰与Sb_2Te_3标准衍射峰相同,在[101]/[012]晶向取向明显,存在较多的Te杂质峰;霍尔系数测试结果表明,薄膜为p型半导体薄膜,薄膜电阻率较低,其电导率接近于金属电导率,载流子浓度量级为10~(23)cm~(-3),具有良好的电学性能;Seebeck系数测量结果显示,薄膜具有良好的热电性能,在不同条件下制备的薄膜的Seebeck系数在7.8-62μV/K范围;在所制备的薄膜中,退火时间为6 h、退火温度为200℃的薄膜其Seebeck系数达到最大,约为62μV/K,且电阻率最小.
Abstract:
Antimony and tellurium were deposited alternatively on the substrates by ion beam sputtering with 11 periodic layers of Sb/Te deposited. The films were then annealed at the vacuum chamber. The properties of the thin films were tested by X-ray diffraction (XRD), Hall measurement and Seebeck coefficient measurement systems. XRD results indicate that the major diffraction peaks of the film match those of Sb_2Te_3. The film growth is apparently at the [101]/[012] orientation and many Te peaks are observed. Hall measurement reveals that all the samples are p-type and the resistivities are low.The electric conductivity of the films approaches that of the bulk metal and the carrier concentration is of 10~(23)cm~(-3) Seebeck coefficient measurement shows that the samples have nice thermoelectrical properties and the seebeck coefficients are in the range of 7.8-62μV/K. Among all, the samples annealed at 200℃for 6 h have the highest seebeck coefficient of about 62 μV/K and the lowest resistivity.
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