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有机薄膜晶体管驱动聚合物发光二极管研究
Integration of organic thin-film transistor and polymer light-emitting diodes
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摘要: 研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta_2O_5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7 V,迁移率为0.91 cm~2/(V·s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26 cd/m~2,电流效率分别为12.4和1.1 cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.Abstract: We investigated the technology and the related physical problems for integrating organic thin-film transistor (OTFT) and polymer light-emitting diode (PLED). The OTFT uses Pentacene as the active medium, Ta_2O_5 as dielectric layer, Ta as gate electrode and Au as source/drain electrodes. The structure of PLED device is ITO/PEDOT : PEO (polyethylene oxide)/P-PPV or MEH-PPV/Ba/AI. The PEDOT:PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of-7. 1 V and carrier mobility of 0.91 cm~2/(V·s). The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/ m~2, and the maximal luminous efficiency are 12. 4 and 1.1 cd/A, respectively.
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