高级搜索

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

,  ,  ,  ,  ,  ,  , 

downloadPDF

上一篇

下一篇

李建军, 于军, 李佳, 王梦, 李玉斌, 吴云翼, 高俊雄, 王耘波. 2010: La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试, 物理学报, 59(2): 1302-1307.
引用本文: 李建军, 于军, 李佳, 王梦, 李玉斌, 吴云翼, 高俊雄, 王耘波. 2010: La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试, 物理学报, 59(2): 1302-1307.
shu
Li Jian-Jun, Yu Jun, Li Jia, Wang Meng, Li Yu-Bin, Wu Yun-Yi, Gao Jun-Xiong, Wang Yun-Bo. 2010: Properties of La and V codoped Bi_4Ti_3O_(12) thin film prepared by sol-gel method, Acta Physica Sinica, 59(2): 1302-1307.
Citation: Li Jian-Jun, Yu Jun, Li Jia, Wang Meng, Li Yu-Bin, Wu Yun-Yi, Gao Jun-Xiong, Wang Yun-Bo. 2010: Properties of La and V codoped Bi_4Ti_3O_(12) thin film prepared by sol-gel method, Acta Physica Sinica, 59(2): 1302-1307.
shu

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

  • 华中科技大学电子科学与技术系,武汉,430074

Properties of La and V codoped Bi_4Ti_3O_(12) thin film prepared by sol-gel method

  • 摘要: 采用溶胶-凝胶(sol-gel)工艺在Pt/TiO_2/SiO_2/p-Si(100)衬底上制备出Bi_4Ti_3O_(12)(BIT)和Bi_(3.25)La_(0.75) Ti_(2.97) V_(0.03)O_(12)(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO_6(或VO_6)八面体的对称性,也增强了Ti-O键(或V-O键)杂化.BLTV薄膜的剩余极化P,为25.4 μC/cm~2,远大于BIT薄膜的9.2 μC/cm~2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.
    Abstract: Bi_4Ti_3O_(12) (BIT) and Bi_(3.25)La_(0.75) Ti_(2.97) V_(0.03)O_(12) (BLTV) thin films were fabricated on the Pt/TiO_2/SiO_2/p-Si (100) substrate using sol-gel method. The effect of La and V codoping on the structural and electrical properties of BIT thin films was investigated. BIT thin film exhibits predominantly c-axis orientation while BLTV thin film shows random orientation. Raman spectroscopy shows that TiO_6 (or VO_6) symmetry decreases and Ti-O (or V-O) hybridization increases with V substitution. The residual polarization of BLTV thin film is 25.4 μC/cm~2, which is larger than that of BIT thin film (9.2 μC/cm~2). BLTV thin film also shows excellent fatigue endurance and low leakage current characteristics, which implies the oxygen vacancies are suppressed by La and V codoping in the thin films.
  • 加载中
  • 加载中
计量
  • 文章访问数:  453
  • HTML全文浏览数:  170
  • PDF下载数:  0
  • 施引文献:  0
出版历程
  • 刊出日期:  2010-02-28

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

  • 华中科技大学电子科学与技术系,武汉,430074

摘要: 采用溶胶-凝胶(sol-gel)工艺在Pt/TiO_2/SiO_2/p-Si(100)衬底上制备出Bi_4Ti_3O_(12)(BIT)和Bi_(3.25)La_(0.75) Ti_(2.97) V_(0.03)O_(12)(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO_6(或VO_6)八面体的对称性,也增强了Ti-O键(或V-O键)杂化.BLTV薄膜的剩余极化P,为25.4 μC/cm~2,远大于BIT薄膜的9.2 μC/cm~2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.

English Abstract

    全文HTML

参考文献 (0)

目录

/

返回文章
返回