摘要:
通过对阳极氧化铝(AAO)模板进行特殊扩孔处理,消除了AAO模板中带电阴离子对沉积碳离子的不良影响,利用磁过滤阴极弧等离子体沉积技术成功制备了非晶碳纳米尖点阵列膜.场发射扫描电镜(FESEM)分析表明,经过氧化和扩孔多步处理制备的AAO模板具有特殊的开口结构,制备的非晶碳纳米尖点阵列完整地复制了AAO模板的孔道阵列结构,纳米点排列整齐有序,直径约100 nm,密度达10~(10)cm~(-2),样品的场发射测试显示,非晶碳纳米点阵列具有良好的电子发射性能,发射电流为10 mA/cm~(-2)时的阈值电场为3.7 V/μm.
Abstract:
Amorphous carbon nanodot arrays were successfully prepared through filtered cathodic arc plasma (FCAP) technique, and via a special widen process, the negative effect of the anion impurities distributed in the anodic aluminum oxide (AAO) template was avoided during carbon ions deposition. The morphology of the samples was studied by a field emission scanning electron microscopy (FESEM). The AAO template prepared by multi-steps combining anodization process and pore-widening process has special pore openings. The nanodot arrays are uniformly distributed and in good agreement with the AAO pore arrays. The diameter of the as-prepared nanodot is about 100 nm, and the density was estimated to be 10~(10) cm~(-2). Field emission properties of the nanodot arrays were investigated and a low threshold field of 3.7 V/mm at 10 mA/cm~2 was obtained.