静态随机存储器单粒子翻转效应三维数值模拟

张科营; 郭红霞; 罗尹虹; 何宝平; 姚志斌; 张凤祁; 王园明

doi:10.3321/j.issn:1000-3290.2009.12.083

物理学报

静态随机存储器单粒子翻转效应三维数值模拟

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张科营, 郭红霞, 罗尹虹, 何宝平, 姚志斌, 张凤祁, 王园明. 2009: 静态随机存储器单粒子翻转效应三维数值模拟, 物理学报, 58(12): 8651-8656. doi: 10.3321/j.issn:1000-3290.2009.12.083

引用本文:

Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming. 2009: Three-dimensional numerial simulation of single event upset effects in static random access memory, Acta Physica Sinica, 58(12): 8651-8656. doi: 10.3321/j.issn:1000-3290.2009.12.083

Citation:

Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming. 2009: Three-dimensional numerial simulation of single event upset effects in static random access memory, Acta Physica Sinica, 58(12): 8651-8656. doi: 10.3321/j.issn:1000-3290.2009.12.083

静态随机存储器单粒子翻转效应三维数值模拟

西北核技术研究所,西安,710024

Three-dimensional numerial simulation of single event upset effects in static random access memory

摘要: 针对特征尺寸为1.5μm的国产静态随机存储器(SRAM),构建了三维SRAM存储单元模型,并对重离子引起的SRAM单粒子翻转效应进行了数值模拟.计算并分析了单粒子引起的单粒子翻转和电荷收集的物理图像,得到了SRAM器件的单粒子翻转截面曲线.单粒子翻转的数值模拟结果与重离子微柬、重离子宽束实验结果比较一致,表明所建立的三维器件模型可以用来研究SRAM器件的单粒子翻转效应.
- 三维数值模拟 /
- 单粒子翻转 /
- 微束 /
- 宽束
Abstract: Three-Dimensional model of static random access memory (SRAM) six-transistor cell is generated by three dimensional process simulator FLOOPS, and device simulator DESSIS is used to simulate the single-event upset effect in SRAM. Single-event upset and charge collecting maps are calculated directly from 3-D simulations. Single event upset maps and cross-section curves obtained from numerial simulation show excellent agreement with broad beam cross section curves and micro-beam upset images for 2 kbit hardened SRAM. It indicates that the three-dimensional model could be used to research the single event upsets in SRAM.

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静态随机存储器单粒子翻转效应三维数值模拟

西北核技术研究所,西安,710024

关键词:

摘要: 针对特征尺寸为1.5μm的国产静态随机存储器(SRAM),构建了三维SRAM存储单元模型,并对重离子引起的SRAM单粒子翻转效应进行了数值模拟.计算并分析了单粒子引起的单粒子翻转和电荷收集的物理图像,得到了SRAM器件的单粒子翻转截面曲线.单粒子翻转的数值模拟结果与重离子微柬、重离子宽束实验结果比较一致,表明所建立的三维器件模型可以用来研究SRAM器件的单粒子翻转效应.

English Abstract

Three-dimensional numerial simulation of single event upset effects in static random access memory

西北核技术研究所,西安,710024

Keywords:

Abstract: Three-Dimensional model of static random access memory (SRAM) six-transistor cell is generated by three dimensional process simulator FLOOPS, and device simulator DESSIS is used to simulate the single-event upset effect in SRAM. Single-event upset and charge collecting maps are calculated directly from 3-D simulations. Single event upset maps and cross-section curves obtained from numerial simulation show excellent agreement with broad beam cross section curves and micro-beam upset images for 2 kbit hardened SRAM. It indicates that the three-dimensional model could be used to research the single event upsets in SRAM.

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静态随机存储器单粒子翻转效应三维数值模拟

Three-dimensional numerial simulation of single event upset effects in static random access memory

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静态随机存储器单粒子翻转效应三维数值模拟

English Abstract

Three-dimensional numerial simulation of single event upset effects in static random access memory

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