摘要:
报道了在蓝宝石衬底上制备CeO_2缓冲层的原位双温工艺法及其对Tl_2Ba_2CaCu_2O_8(Tl-2212)薄膜超导特性的影响.XPS和AFM测试结果表明.采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点.在先驱膜的高温后退火过程中,40 nm厚的CeO_2薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散.随后制备厚度为530 nm的TI-2212超导薄膜具有优越的电学性能,其临界温度达到108.2 K,临界电流密度达到6.58 MA/cm~2(77 K,0 T),微波表面电阻只有185μΩ(77 K,10 GHz),超导薄膜的主要特性参数得到显著提高.
Abstract:
The preparation of CeO_2 buffer layers on r-cut sapphire substrates by in situ two-temperature process and T1-2212 superconducting films has been studied. The results of XPS and AFM show that this simple process of growing buffer layer produces CeO_2 film with smooth surface, which can hold back the diffusion of A1 from sapphire into TI-2212 film. The 530 nm thick T1-2212 films grown on the CeO_2 buffer layers subsequently possess excellent electrical property. The films have a high transition temperature (Tc = 108.2 K), a high critical current density (J_c = 6.58 MA/cm~2 at 77 K and zero applied magnetic field) and a low surface resistance (R_s = 185 μΩ at 10 GHz and 77 K), and their superconductivity can be improved significantly.
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