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Figure Fig. 1.  (Color online) The flow chart of 10 × 10 β-Ga₂O₃ solar-blind UV detector array preparation.

Figure Fig. 2.  (Color online) (a) XRD pattern of Ga₂O₃ after anneal process. (b) UV−visible absorption spectrum of the β-Ga₂O₃ film grown on sapphire substrate. The inset shows E_g of film. (c) The real image of prepared array and local magnification diagram.

Figure Fig. 3.  (Color online) (a) Energy band diagram of detector after UV illumination. (b) Experimental I_dark and I_photo of all detectors in the array under the P of 1800 μW/cm². (c) and (d) Gaussian distribution of I_dark and I_photo extracted from (b), respectively.

Figure Fig. 4.  (Color online) (a) and (b) I_photo curves of different P in linear and semi-logarithmic coordinates, respectively. (c) I_photo distribution diagram under different P and their fitting line. (d) R and EQE at different P. The inset shows D^* of different P.

Figure Fig. 5.  (Color online) (a) Under P of 1800 μW/cm², I−T curves at different bias. (b) Time response characteristics of the device at 5 V. (c) I−T characteristic curves at different P at 5 V. (d) Experimental I−T curves for multiple cycle.

Figure Fig. 6.  (Color online) (a) Schematic of imaging system for the solar-blind UV detector array. (b), (c), and (d) Imaging results under RT when the bias voltage is 5 V and P is 1800, 1000, and 700 μW/cm², respectively. (e) and (f) Imaging results at 3 and 1 V under RT when P is 1800 μW/cm², respectively. (g) and (h) I_photo and I_dark, PDCR and R at different bias voltage under P of 1800 μW/cm², respectively.

Figure Fig. 7.  (Color online) Under P of 1800 μW/cm², (a) and (b) imaging results at RT, 50, 80, 110, 150, 200, 250, and 300 °C at 5 and 1 V, respectively. (c) I_photo and I_dark under different temperatures at 1 and 5 V. (d) PDCR and R under different temperatures at 1 and 5 V. (e) Image results at RT and 300 °C when applied bias is 1 and 5 V by using the gray image processing technology.