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Figure 1.  (a) Side view of crystal structure with V atoms intercalated between the TaS₂ layers. (b) Top view of crystal structure along the c-axis. (c) Energy dispersive x-ray spectrometer (EDXS) for the V_1/3TaS₂ crystal. (d) Single crystal XRD pattern. Inset: the photograph of a crystal.

Figure 2.  (a) The calculated band structure with SOC. (b) Temperature dependence of magnetic susceptibility, χ = M/H, measured at H = 2000 Oe applied along the c-axis with both ZFC and FC processes. The right axis is for χ⁻¹(T).

Figure 3.  (a) Temperature dependence of longitudinal resistivity ρ_xx measured at zero field, the inset shows resistivity measured at various magnetic fields. (b) Field dependence of MR at various temperatures with a magnetic field applied along the c-axis.

Figure 4.  (a) Field dependence of Hall resistivity, ρ_yx, measured at various temperatures for a V_1/3TaS₂ crystal. (b) Components of the conductivity tensor, i.e., σ_xy as a function of magnetic field for different temperatures (<100 K). Hollow dots represent the experimental data and the solid lines are the fitting curves using the two-carrier model.

Figure 5.  The carrier mobilities, μ_h and μ_e, and (inset) the carrier concentrations n_h and n_e, as a function of temperature, extracted from the two-carrier model analysis of σ_xy data.