[1] Mishra U K, Parikh P, Wu Y F 2002 Proc. IEEE 90 1022 doi: 10.1109/JPROC.2002.1021567
[2] Quay R 2008 Gallium Nitride Electronics (Berlin: Springer-Verlag) pp23–30
[3] 赵正平 2015 半导体技术 40 1 doi: 10.13290/j.cnki.bdtjs.2015.01.001 Zhao Z P 2015 Semicond. Tech. 40 1 doi: 10.13290/j.cnki.bdtjs.2015.01.001
[4] Maas S A 2003 Nonlinear Microwave and RF Circuits Second Edition (Norwood: Artech House Publisher) pp29–55
[5] Baylis C, Dunleavy L, Connick R 2009 IEEE 10th Annual Wireless and Microwave Technology Conference Clearwater, USA, April 20–21, 2009 p1
[6] Eskanadri S, Hamedani F T 2012 Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems Warsaw, Poland, May 24–26, 2012 p360
[7] Hajji R, Poulton M, Crittenden D B, Gengler J, Xia P 2014 9th European Microwave Integrated Circuit Conference Rome, Italy, October 6–7, 2014 p373
[8] Darwish A M, Huebschman B D, Viveiros E, Hung H A 2009 IEEE T. Microw. Theory 57 3205 doi: 10.1109/TMTT.2009.2034050
[9] Ghosh S, Sharma K, Agnihotri S, Chauhan Y S, Khandelwal S, Fjeldly T A, Yigletu F M, Iñiguez B 2014 IEEE 2nd International Conference on Emerging Electronics Bengaluru, India, December 3–6, 2014 p1
[10] Huque M A, Eliza S A, Rahman T, Huq H F, Islam S K 2009 Solid-State Electron. 53 341 doi: 10.1016/j.sse.2009.01.004
[11] 林倩, 贾立宁, 胡单辉, 陈思维, 刘林盛, 刘畅, 刘建利 2022 南京邮电大学学报 42 42 doi: 10.14132/j.cnki.1673-5439.2022.02.005 Lin Q, Jia L N, Hu D H, Chen S W, Liu L S, Liu C, Liu J L 2022 J. Nanjing Univ. Posts Telecommun. 42 42 doi: 10.14132/j.cnki.1673-5439.2022.02.005
[12] Khan M K, Alim M A, Gaquiere C 2021 Microelectron. Eng. 238 111508 doi: 10.1016/j.mee.2021.111508
[13] Tokuda H, Yamazaki J, Kuzuhara M 2010 J. Appl. Phys. 108 104509 doi: 10.1063/1.3514079
[14] Zomorrodian V, Pei Y, Mishra U K, York R A 2010 Phys. Status Solidi 7 2450 doi: 10.1002/pssc.200983877
[15] Chang Y H, Chang J J 2007 IEEE Conference on Electron Devices and Solid-State Circuits Tainan, Taiwan, December 20–22, 2007 p237
[16] Curtice W R 1980 IEEE T. Microw. Theory 28 448 doi: 10.1109/TMTT.1980.1130099
[17] Dhar J, Garg S K, Arora P K, Rana S S, 2007 International Symposium on Signals, Circuits and Systems Iasi, Romania, July 13–14, 2007 p1
[18] 成爱强, 王帅, 徐祖银, 贺瑾, 张天成, 包华广, 丁大志 2023 物理学报 72 147103 doi: 10.7498/aps.72.20230440 Cheng A Q, Wang S, Zu Z Y, He J, Zhang T C, Bao H G, Ding D Z 2023 Acta Phys. Sin. 72 147103 doi: 10.7498/aps.72.20230440
[19] 亚历克斯·利多, 约翰·斯其顿, 迈克尔·德·罗伊, 戴维·罗伊施 (段宝兴, 杨银堂译) 2018 氮化镓功率晶体—器件、电路与应用第二版 (北京: 机械工业出版社) 第36—37页 Alex L, John S, Michael D R, David R (translated by Duan B X, Yang Y T) 2008 GaN Transistors for Efficient Power Conversion Second Edition (Beijing: China Machine Press) pp36–37
[20] Cuerdo R, Pedrós J, Navarro A, Braña A F, Paul J L, Muñoz E, Calle F 2008 Mater. Electron. 19 189 doi: 10.1007/s10854-007-9298-1
[21] Hatano M, Kunishio N, Chikaoka H, Yamazaki J, Makhzani Z B, Yafune N, Sakuno K, Hashimoto S, Akita K, Yamamoto Y, Kuzuhara M 2010 CS MANTECH Conference Oregon, USA, May 17–20, 2010 p101
[22] Zhang X B, Liu N Z, Yao R H 2020 Acta Phys. Sin. 69 157303 [张雪冰, 刘乃漳, 姚若河 2020 物理学报 69 157303] doi: 10.7498/aps.69.20200250 Zhang X B, Liu N Z, Yao R H 2020 Acta Phys. Sin. 69 157303 doi: 10.7498/aps.69.20200250
[23] 任春江, 陈堂胜, 焦刚, 李肖 2007 固体电子学研究与进展 27 329 doi: 10.3969/j.issn.1000-3819.2007.03.011 Ren C J, Chen T S, Jiao G, Li X 2007 Res. Prog. Solid State Electron. 27 329 doi: 10.3969/j.issn.1000-3819.2007.03.011
[24] 高建军 2007 场效应晶体管射频微波建模技术 (北京: 电子工业出版) 第75—125页 Gao J J 2007 RF Microwave Modeling Technology for Field Effect Transistors (Beijing: Electronic Industry Publishing) pp75–125
[25] Wang Y H, Liang Y C, Samudra1 G S, Chang T F, Huang C F, Yuan L, Lo G Q 2013 Semicond. Sci. Tech. 28 125010 doi: 10.1088/0268-1242/28/12/125010
[26] Islam S, Alim M A, Chowdhury A Z, Gaquiere C 2022 JTAC 147 10991 doi: 10.1007/s10973-022-11371-y