[1] Jung D Y, Park K S, Kim S I, Kwon S, Cho D H, Jang H G, Lim J W 2023 ETRI J. 45 543 doi: 10.4218/etrij.2022-0077
[2] Mai X C, Chen S L, Chen H W, Lee Y M 2023 Electronics 12 2803 doi: 10.3390/electronics12132803
[3] Yan Y, Lan W, Chen Y, Yang D, Zhou Y, Zhu Z, Liou J J 2022 Adv. Electron. Mater. 8 2100886
[4] Anderson N T, Lockledge S P 2022 ASM International Pasadena, USA, October 30–November 3, 2022 pp329–332
[5] Smallwood J M 2023 J. Electrostat. 125 103817 doi: 10.1016/j.elstat.2023.103817
[6] Ker M D, Pommerenke D 2022 IEEE Trans. on Electromagn. Compat. 64 1783 doi: 10.1109/TEMC.2022.3223265
[7] Yang L, Yang C, Tu Y, Wang X, Wang Q 2021 IEEE Access 9 33512 doi: 10.1109/ACCESS.2021.3061125
[8] Ji Q, Luo A, Liu Q, Wan B 2023 International Conference on Optoelectronic Information and Functional Materials 2023 12781
[9] Gimenez S P, Galembeck E H S 2023 ECS Trans. 111 161 doi: 10.1149/11101.0161ecst
[10] Ajay 2021 Silicon 13 1325 doi: 10.1007/s12633-020-00527-w
[11] Hong S Z, Chen S L, Chen H W, Lee Y M 2021 IEEE Electron Device Lett. 42 1512 doi: 10.1109/LED.2021.3104735
[12] Lai J Y, Chen S L, Liu Z W, Chen H W, Chen H H, Lee Y M 2022 Sens. Mater. 34 1835
[13] Zhu Z, Yang Z, Fan X, W Fan 2021 Crystals 11 128 doi: 10.3390/cryst11020128
[14] Luo X, Xu J, Xu X, Luo H, Dai Z 2022 2022 International EOS/ESD Symposium on Design and System Chengdu China, November 9–11, 2022 p2023-03-22
[15] Arosio M, Boffino C, Morini S, Dirk Priefert, Oezguer Albayrak, Viktor Boguszewicz, Andrea Baschirotto 2021 IEEE Trans Electron. Devices 68 2848 doi: 10.1109/TED.2021.3074118
[16] 苏乐, 王彩琳, 杨武华, 梁晓刚, 张超 2023 物理学报 72 148501 doi: 10.7498/aps.72.20230550 Su L, Wang C L, Yang W H, Liang X G, Zhang C 2023 Acta Phys. Sin. 72 148501 doi: 10.7498/aps.72.20230550
[17] Xi J, Wang J, Lu J, Chen J, Xin Y, Li Z, Tu C, Shen Z J 2018 Microelectron. Reliab. 88-90 593 doi: 10.1016/j.microrel.2018.07.101
[18] Su L, Wang C L, Yang W H, Zhang C 2023 Microelectron. Reliab. 143 114950 doi: 10.1016/j.microrel.2023.114950
[19] Tian Y, Yang Z, Xu Z, Liu S, Sun W F, Shi L, Zhu Y, Ye P, Zhou J 2018 Superlattices Microstruct. 116 151 doi: 10.1016/j.spmi.2018.02.014
[20] Su L, Wang C L, Yang W H, An J 2022 Microelectron. Reliab. 139 114822 doi: 10.1016/j.microrel.2022.114822
[21] Sun J, Zheng Z, Zhang L, Chen K J 2022 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICS Vancouver, Canada, May 22–25, 2022 pp73–76