[1] 辛启明, 刘英坤, 贾素梅 2011 半导体技术 36 672 doi: 10.3969/j.issn.1003-353x.2011.09.005 Xin Q M, Liu Y Q, Jia S M 2011 Semicond. Technol. 36 672 doi: 10.3969/j.issn.1003-353x.2011.09.005
[2] Meyerson B S 1986 Appl. Phys. Lett. 48 797 doi: 10.1063/1.96673
[3] 马良 2019 中国新通信 21 222 doi: 10.3969/j.issn.1673-4866.2019.12.181 Man L 2019 Chin. New Telecommun. 21 222 doi: 10.3969/j.issn.1673-4866.2019.12.181
[4] 谢孟贤, 古妮娜 2008 微电子学 38 34 Xie M X, Gu N N 2008 Microelectronics 38 34
[5] Çaışkan C, Kalyoncu I, Yazici M, Gurbuz Y 2018 IEEE Trans. Circuits Syst. Regul. Pap. 66 1419 doi: 10.1109/TCSI.2018.2883949
[6] 包宽, 周骏, 沈亚 2017 固体电子学研究与进展 37 239 Bao K, Zhou J, Shen Y 2017 Solid State Electron. Res. Prog. 37 239
[7] 李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新 2015 物理学报 64 118502 doi: 10.7498/aps.64.118502 Li P, Guo H X, Guo Q, Wen L, Cui J W, Wang X, Zhang J X 2015 Acta Phys. Sin. 64 118502 doi: 10.7498/aps.64.118502
[8] Appaswamy A 2009 Ph. D. Dissertation (Georgia: Georgia Institute of Technology
[9] Sheng L, Yong-Bin K, Fabrizio L 2011 IEEE Trans. Device Mater. Reliab. 12 68 doi: 10.1109/TDMR.2011.2167233
[10] Jung S, Lourenco N E, Song I, Oakley M A, England T D, Arora R, Cressler J D 2014 IEEE Trans. Nucl. Sci. 61 3193 doi: 10.1109/TNS.2014.2358207
[11] Al Seragi E M, Dash S, Muthuseenu K, Cressler J D, Barnaby H J, Khachatrian A, Buchner S P, McMorrow D, Zeinolabedinzadeh S 2021 IEEE Trans. Nucl. Sci. 69 2154 doi: 10.1109/TNS.2021.3085309
[12] Li P, He C H, Guo H X, Zhang J X, Li Y, Wei J 2019 Microelectron. Reliab. 103 113499 doi: 10.1016/j.microrel.2019.113499
[13] Zhang J X, Guo Q, Guo H X, Lu W, He C H, Wang X, Wen L 2018 Microelectron. Reliab. 84 105 doi: 10.1016/j.microrel.2018.03.007
[14] Jin D Y, Wu L, Zhang W R, Na W C, Yang S M, Jia X X, Yang Y Q 2022 J. Beijing Univ. Technol. 48 1280 doi: 10.11936/bjutxb2021070007
[15] Zhang J X, Guo H X, Pan X Y, Guo Q, Zhang F Q, Feng J, Wang X, Wei Y, Wu X X 2018 Chin. Phys. B 27 108501 doi: 10.1088/1674-1056/27/10/108501
[16] 张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉 2022 物理学报 71 058502 doi: 10.7498/aps.71.20211795 Zhang J X, Wang X, Guo H X, Feng J, Lü L, Li P, Yan Y Y, Wu X X, Wang H 2022 Acta Phys. Sin. 71 058502 doi: 10.7498/aps.71.20211795
[17] Lourenco N E, Zeinolabedinzadeh S, Ildefonso A, Fleetwood Z E, Coen C T, Song I, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 273 doi: 10.1109/TNS.2015.2509250
[18] Chen W, Pouget V, Barnaby H J, Cressler J D, Niu G, Fouillat P, Lewis D 2003 IEEE Trans. Nucl. Sci. 50 2081 doi: 10.1109/TNS.2003.820766
[19] Zeinolabedinzadeh S, Ying H, Fleetwood Z E, Roche N J H, Khachatrian A, McMorrow D, Cressler J D 2016 IEEE Trans. Nucl. Sci. 64 125 doi: 10.1109/TNS.2016.2631431
[20] Lourenco N E, Phillips S D, England T D, Cardoso A S, Fleetwood Z E, Moen K A, Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 4175 doi: 10.1109/TNS.2013.2290301
[21] Phillips S D, Moen K A, Lourenco N E, Cressler J D 2012 IEEE Trans. Nucl. Sci. 59 2682 doi: 10.1109/TNS.2012.2218129
[22] 李培, 贺朝会, 郭红霞, 张晋新, 魏佳男, 刘默寒 2022 太赫兹科学与电子信息学报 20 523 doi: 10.11805/TKYDA2021443 Li P, He C H, Guo H X, Zhang J X, Wei J N, Liu M H 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 523 doi: 10.11805/TKYDA2021443
[23] Najafizadeh L, Phillips S D, Moen K A, Diestelhorst R M, Bellini M, Saha P K, Marshall P W 2009 IEEE Trans. Nucl. Sci. 56 3469 doi: 10.1109/TNS.2009.2034159
[24] Ildefonso A, Coen C T, Fleetwood Z E, Tzintzarov G N, Wachter M T, Khachatrian A, Cressler J D 2017 IEEE Trans. Nucl. Sci. 65 239 doi: 10.1109/TNS.2017.2772924
[25] Song I, Raghunathan U S, Lourenco N E, Fleetwood Z E, Oakley M A, Jung S, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 1099 doi: 10.1109/TNS.2016.2518400