[1] Ni Y,Xu H,Meng T F,et al. A study on the deep etching technology for WLP package[J]. Materials Reports,2021,35(S2):110−114 (倪烨,徐浩,孟腾飞,等. 基于硅基WLP封装的深孔刻蚀工艺研究[J]. 材料导报,2021,35(S2):110−114(in chinese) Ni Y, Xu H, Meng T F, et al. A study on the deep etching technology for WLP package[J]. Materials Reports, 2021,35(S2):110 − 114
[2] Verma G,Mondal K,Gupta A. Si-based MEMS resonant sensor: a review from microfabrication perspective[J]. Microelectronics Journal,2021,118:105210 doi: 10.1016/j.mejo.2021.105210
[3] Osipov A A,Iankevich G A,Berezenko V I,et al. Influence of operation parameters on Bosch-process technological characteristics[J]. Materials Today: Proceedings,2020,30:599−602 doi: 10.1016/j.matpr.2020.01.412
[4] Fu J,Li J,Yu J,et al. Improving sidewall roughness by combined RIE-Bosch process[J]. Materials Science in Semiconductor Processing,2018,83:186−191 doi: 10.1016/j.mssp.2018.04.033
[5] Chang B,Leussink P,Jensen F,et al. DREM: infinite etch selectivity and optimized scallop size distribution with conventional photoresists in an adapted multiplexed Bosch DRIE process[J]. Microelectronic Engineering,2018,191:77−83 doi: 10.1016/j.mee.2018.01.034
[6] Xu G B,Huang H,Zhan M H,et al. Experimental evaluation of inductively coupled plasma deep silicon etching[J]. Chinese Journal of Vacuum Science and Technology,2013,33(08):832−835 (许高斌,皇华,展明浩,等. ICP深硅刻蚀工艺研究[J]. 真空科学与技术学报,2013,33(08):832−835(in chinese) doi: 10.3969/j.issn.1672-7126.2013.08.21 Xu G B, Huang H, Zhan M H, et al. Experimental evaluation of inductively coupled plasma deep silicon etching[J]. Chinese Journal of Vacuum Science and Technology, 2013, 33 (08):832 − 835. doi: 10.3969/j.issn.1672-7126.2013.08.21
[7] Ou Yang C,Kam S,Liu C,et al. Assessment of removal efficiency of perfluorocompounds (PFCs) in a semiconductor fabrication plant by gas chromatography[J]. Chemosphere,2009,76(9):1273−1277 doi: 10.1016/j.chemosphere.2009.06.039
[8] Kazar Mendes M,Ghouila-Houri C,Hammami S,et al. Optimization of reactive-ion etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: an alternative to etching Si in MEMS with Au components[J]. Materials Letters,2021,285:129058 doi: 10.1016/j.matlet.2020.129058
[9] Lee J,Efremov A,Kwon K. On the relationships between plasma chemistry, etching kinetics and etching residues in CF4+C4F8+Ar and CF4+CH2F2+Ar plasmas with various CF4/C4F8 and CF4/CH2F2 mixing ratios[J]. Vacuum,2018,148:214−223 doi: 10.1016/j.vacuum.2017.11.029
[10] Feil S,Märk T D,Mauracher A,et al. Investigations of electron attachment to the perfluorocarbon molecules c-C4F8, 2-C4F8, 1, 3 C4F6, and c-C5F8[J]. International Journal of Mass Spectrometry,2008,277(1-3):41−51 doi: 10.1016/j.ijms.2008.06.017
[11] Zhang Q,Qin S,Guo Z,et al. Atmospheric chemistry of CF3C≡CCF3: kinetics, products, mechanism of gas-phase reaction with OH radicals, and atmospheric implications[J]. Atmospheric Environment,2021,251:118264 doi: 10.1016/j.atmosenv.2021.118264
[12] Limão-Vieira P,Duflot D,Anzai K,et al. Studies of low-lying triplet states in 1, 3-C4F6, c-C4F6 and 2-C4F6 by electron energy-loss spectroscopy and ab initio calculations[J]. Chemical Physics Letters,2013,574:32−36 doi: 10.1016/j.cplett.2013.04.059
[13] Hussain S Q,Ahn S,Park H,et al. Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio[J]. Vacuum,2013,94:87−91 doi: 10.1016/j.vacuum.2013.01.026
[14] Marton M,Ritomsky M,Michniak P,et al. Study of self-masking nanostructuring of boron doped diamond films by RF plasma etching[J]. Vacuum,2019,170:108954 doi: 10.1016/j.vacuum.2019.108954
[15] Hou Z L,Zhou Y P,Zha Q,et al. Inductively coupled plasma etching of AlN film for fabrication of 5G networks & devices: a methodological study[J]. Chinese Journal of Vacuum Science and Technology,2020,40(03):220−225 (侯卓立,周燕萍,査强,等. 薄膜体声波滤波器AlN压电薄膜的ICP刻蚀研究[J]. 真空科学与技术学报,2020,40(03):220−225(in chinese) Hou Z L, Zhou Y P, Zha Q, et al . Inductively coupled plasma etching of AlN film for fabrication of 5G networks ＆ devices: a methodological study [J]. Chinese Journal of Vacuum Science and Technology, 2020, 40 (03):220 − 225.
[16] Xiao T,Ni D. Multiscale modeling and neural network model based control of a plasma etch process[J]. Chemical Engineering Research and Design,2020,164:113−124 doi: 10.1016/j.cherd.2020.09.013
[17] Guo X H,Hu L,Ren X Y,et al. Fabrication of GaN-based grating by optimized inductively coupled plasma etching[J]. Chinese Journal of Luminescence,2021,42(06):889−895 (郭孝浩,胡磊,任霄钰,等. GaN基光栅的干法刻蚀工艺[J]. 发光学报,2021,42(06):889−895(in chinese) doi: 10.37188/CJL.20210037 Guo X H, Hu L, Ren X Y, et al. Fabrication of GaN-based grating by optimized inductively coupled plasma etching[J]. Chinese Journal of Luminescence, 2021, 42 (06):889 − 895 doi: 10.37188/CJL.20210037