[1] Cummings K A, Risbud S H. Dielectric materials for window applications[J]. J Phys Chem Solids,2000,61(4):551−560 doi: 10.1016/S0022-3697(99)00253-X
[2] Michizono S, Saito Y. Surface discharge and surface potential on alumina RF windows[J]. Vacuum,2001,60(1):235−239
[3] Suharyanto, Michizono S, Saito Y, et al. Secondary electron emission of TiN-coated alumina ceramics[J]. Vacuum,2007,81(6):799−802 doi: 10.1016/j.vacuum.2005.11.062
[4] Michizono S, Saito Y, Suharyanto, et al. Estimation of surface charges on dielectric materials for high power rf windows[J]. Appl Surf Sci,2009,256(4):950−953 doi: 10.1016/j.apsusc.2009.07.026
[5] Wang D, He Y, Cui W. Secondary electron emission characteristics of TiN coatings produced by RF magnetron sputtering[J]. J Appl Phys,2018,124(5):053301 doi: 10.1063/1.5035486
[6] Uchida H, Yamashita M. Effect of preparation conditions on pinhole defect of TiN films by ion mixing and vapor deposition[J]. Vacuum,2002,65(3):555−561
[7] Penilla E, Wang J. Pressure and temperature effects on stoichiometry and microstructure of nitrogen-rich TiN thin films synthesized via reactive magnetron DC-sputtering[J]. J Nanomater,2008,2008:145−152
[8] Kaabi W, Variola A, Keppel G, et al. , Titanium nitride coating as a multipactor suppressor[C]. 1st International Particle Accelerator Conference (IPAC 2010), Joint Accelerator Conferences Website, 2010: 2887-2889
[9] Variola A, Kaabi W, Jenhani H, et al. Titanium nitride coating of RF ceramic windows by reactive DC magnetron sputtering[C]. 11th European Particle Accelerator Conference (EPAC'08), Joint Accelerator Conferences Website, 2008: 931-933
[10] An T, Tian H W, Wen M, et al. Structures and mechanical properties of TiN/SiNx multilayer films deposited by magnetron sputtering at different N2/Ar gas flow ratios[J]. Vacuum,2008,82(11):1187−1190 doi: 10.1016/j.vacuum.2008.02.004
[11] 李永健, 孔营, 胡健, 等. 高功率脉冲电流对磁控溅射TiN薄膜结构及力学性能影响[J]. 真空科学与技术学报,2015,35(12):1483−1488(in chinese) doi: 10.13922/j.cnki.cjovst.2015.12.15 Li Y J, Kong Y, Hu J, et al. Synthesis of TiN coating by high power pulshed magnetron supttering and its mechanical properties[J]. Chinese Journal of Vacuum Science and Technology,2015,35(12):1483−1488 doi: 10.13922/j.cnki.cjovst.2015.12.15
[12] Peng Z, Chen G, Zhao Y P, et al. Investigation of TiN film on an RF ceramic window by atomic layer deposition[J]. J Vac Sci Technol,2020,38(5):052401 doi: 10.1116/6.0000159
[13] Maarouf M, Haider M B, Al-Kuhaili M F, et al. Negative magnetoresistance in iron doped TiN thin films prepared by reactive magnetron sputtering[J]. J. Magn Magn Mater,2020,514:167235 doi: 10.1016/j.jmmm.2020.167235
[14] Kim B G, Jo C, Shin J, et al. Ordered mesoporous titanium nitride as a promising carbon-free cathode for aprotic lithium-oxygen batteries[J]. ACS Nano,2017,11(2):1736−1746 doi: 10.1021/acsnano.6b07635
[15] Chan M-H, Lu F-H. X-ray photoelectron spectroscopy analyses of titanium oxynitride films prepared by magnetron sputtering using air/Ar mixtures[J]. Thin Solid Films,2009,517(17):5006−5009 doi: 10.1016/j.tsf.2009.03.100
[16] Jouan P Y, Peignon M C, Cardinaud C, et al. Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy[J]. Appl Surf Sci,1993,68(4):595−603 doi: 10.1016/0169-4332(93)90241-3
[17] White N, Campbell A L, Grant J T, et al. Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films[J]. Appl Surf Sci,2014,292:74−85 doi: 10.1016/j.apsusc.2013.11.078
[18] Arshi N, Lu J, Koo B H, et al. Effect of nitrogen flow rate on the properties of TiN film deposited by e beam evaporation technique[J]. Appl Surf Sci,2012,258(22):8498−8505 doi: 10.1016/j.apsusc.2012.04.179
[19] Arshi N, Lu J, Joo Y K, et al. Influence of nitrogen gas flow rate on the structural, morphological and electrical properties of sputtered TiN films[J]. J MATER SCI-MATER EL,2013,24(4):1194−1202 doi: 10.1007/s10854-012-0905-4
[20] Lu L, Luo F, Huang Z, et al. Influence of the nitrogen flow rate on the infrared emissivity of TiNx films[J]. Infrared Phys Technol,2018,88:144−148 doi: 10.1016/j.infrared.2017.11.015