[1] Rangan S, Rappaport T S, Erkip E 2014 Proc. IEEE 102 366 doi: 10.1109/JPROC.2014.2299397
[2] Wu Z Y, Lu W, Bao X Y, Meng F B, Yang Z B, Sun Q, Zhao F Z, Wang Y T 2021 Int. J. Mod. Phys. B 35 15017 doi: 10.1142/s0217979221501071
[3] Sun P, Upadhyaya P, Jeong D, Jeong D H, Heo D, La Rue G S 2007 IEEE Microw. Wirel. Co. 17 352 doi: 10.1109/LMWC.2007.895706
[4] Doan C H, Emami S, Niknejad A M, Brodersen R W 2005 IEEE J. Solid-State Circuits 40 144 doi: 10.1109/JSSC.2004.837251
[5] Wolf R, Joseph A, Botula A, Slinkman J 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems San Diego, USA, January 19–21, 2009 p1
[6] Campbell C F, Dumka D C 2010 IEEE MTT-S International Microwave Symposium Anaheim, USA, May 23–28, 2010 p145
[7] Daneshmand M, Mansour R R 2011 IEEE Microw. Mag. 12 92 doi: 10.1109/MMM.2011.941417
[8] Boles T, Brogle J, Hoag D, Curcio D 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011) Tel Aviv, Israel, November 7–9, 2011 p1
[9] Jaffe M, Abou-Khalil M, Botula A, Ellis-Monaghan J, Gambino J, Gross J, He Z X, Joseph A, Phelps R, Shank S, Slinkman J, Wolf R 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems San Diego, USA, January 26–28, 2015 p30
[10] Stefanini R, Chatras M, Blondy P, Rebeiz G M 2011 IEEE MTT-S International Microwave Symposium Digest, Baltimore MD, USA, June 5–10, 2011 p1
[11] Grant P, Denhoff M, Mansour R R 2004 Proceedings of the IEEE International Conference on MEMS, NANO and Smart Systems (ICMENS) Banff, Canada, August 25–27, 2004 p515
[12] Tabata O, Tsuchiya T 2014 Reliability of MEMS: Testing of Materials and Devices (Hoboken: John Wiley & Sons) pp124–130
[13] Pan K, Wang W, Shin E, Freeman K, Subramanyam G 2015 IEEE T. Electron Dev. 62 2959 doi: 10.1109/TED.2015.2451993
[14] Morin F J 1959 Phys. Rev. Lett. 3 34 doi: 10.1103/PhysRevLett.3.34
[15] Bahl S K, Chopra K L 1970 J. Appl. Phys. 41 2196 doi: 10.1063/1.1659189
[16] Raoux S, Cheng H Y, Munoz B, Jordan-Sweet J 2009 European Phase Change and Ovonic Science Symposium, 2009 p91
[17] Raoux S, Ielmini D, Wuttig M, Karpov I 2012 MRS Bull. 37 118 doi: 10.1557/mrs.2011.357
[18] Raoux S, Cheng H Y, Caldwell M A, Wong H S P 2009 Appl. Phys. Lett. 95 071910 doi: 10.1063/1.3212732
[19] Fantini P 2020 J. Phys. D Appl. Phys. 53 283002 doi: 10.1088/1361-6463/ab83ba
[20] Chua K, Shi L P, Zhao R, Lim K G, Chong T C, Schlesinger T E, Bain J A 2010 Appl. Phys. Lett. 97 183506 doi: 10.1063/1.3508954
[21] Wuttig M 2005 Nat. Mater. 4 265 doi: 10.1038/nmat1359
[22] Iwasaki H, Ide Y, Harigaya M, Kageyama Y, Fujimura I 1992 J. Appl. Phys. 31 461 doi: 10.1143/JJAP.31.461
[23] Singh T, Mansour R R 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Ann Arbor, USA, July 16–18, 2018 p3
[24] Bettoumi I, Gall N L, Blondy P 2022 IEEE Microw. Wirel. Co 32 52 doi: 10.1109/LMWC.2021.3114325
[25] Cruz L D L, Ivanov T, Birdwell A G, Weil J D, Kingkeo K, Zaghloul M 2023 IEEE Electron Device Lett. 70 4178 doi: 10.1109/TED.2023.3289782
[26] Charlet I, Guerber S, Naoui A, Charbonnier B, Dupré C, Lugo-Alvarez J, Hellion C, Allain M, Podevin F, Perret E 2024 IEEE Electron Device Lett. 45 500 doi: 10.1109/LED.2023.3347800
[27] Kolobov A V, Fons P, Frenkel A I, Ankudinov A L, Tominaga J, Uruga T 2004 Nat. Mater. 3 703 doi: 10.1038/nmat1215