[1] Stiasny T, Quittard O, Waltisberg C, Meier U 2018 Microelectron. Reliab. 88 510
[2] Kang Z, Tang Y, Zhan C, Wang W, Zhu L, Sun H, Ji S 2024 CPSS & IEEE International Symposium on Energy Storage and Conversion Xi'an, China, November 8–11, 2024 p190
[3] Wu J, Pan J, Ren C, J Liu, Zhao B, Yu Z, Zeng R 2025 IEEE Trans. Power Electron. 40 5223 doi: 10.1109/TPEL.2024.3514459
[4] Wang J, Chen L, Zhang X, Liu J, Zhao B, Yu Z, Wu J, Zeng R 2025 IEEE Trans. Power Electron 40 5309 doi: 10.1109/TPEL.2024.3508835
[5] Lutz J, Schlangenotto H 2020 Semiconductor Power Devices: Physics, Characteristic, Reliability (Vol. 1) (Switzerland: Springer International Publishing AG) p108
[6] Rahimo M, Kopta A, Eicher S, Schlapbach, Linder 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Kitakyushu, Japan, May 24–27, 2004 p437
[7] Rahimo M, Kopta A, Eicher S, Schlapbach U, Linder S 2005 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Santa Barbara, CA, USA, May 23–26, 2005 p67
[8] Stiasny T, Streit P 2005 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Santa Barbara, CA, USA, May 23–26, 2005 p203
[9] Yang W H, Wang C L 2021 Microelectron. Reliab. 120 114111 doi: 10.1016/j.microrel.2021.114111
[10] Yang W H, Wang C L, Yang J 2019 Microelectron. Reliab. 92 34 doi: 10.1016/j.microrel.2018.11.001
[11] Lutz J, Baburske R, Chen M, B Heinze, Domeij M, Felsl HP, Schulze HJ 2009 IEEE Trans. Electron Devices 56 2825 doi: 10.1109/TED.2009.2031019
[12] Schulze H J, Niedernostheide F J, Pfirsch F, Baburske R 2013 IEEE Trans. Electron Devices 60 551 doi: 10.1109/TED.2012.2225148
[13] Baburske R, Niedernostheide F J, Lutz J, Schulze HJ 2013 IEEE Trans. Electron Devices 60 2308 doi: 10.1109/TED.2013.2264839
[14] Lutz J, Baburske R 2012 Microelectron. Reliab. 52 475 doi: 10.1016/j.microrel.2011.10.018
[15] Oetjen J, Jungblut R, Kuhlmann U, Arkenau J, Sittig R 2000 Solid State Electron. 44 117 doi: 10.1016/S0038-1101(99)00209-9
[16] Baburske R, Lutz J, Heinze B 2010 IEEE International Reliability Physics Symposium Proceedings Anaheim, CA, USA, 2010, p162
[17] 杨武华, 王彩琳, 张如亮, 张超, 苏乐 2023 物理学报 72 078501 doi: 10.7498/aps.72.20222248 Yang W H, Wang C L, Zhang R L, Zhang C, Su L 2023 Acta Phys. Sin. 72 078501 doi: 10.7498/aps.72.20222248
[18] Yang W H, Wang C L, Zhang R L, Su L, Zhang Q 2021 IEEE Trans. Electron Devices 68 208 doi: 10.1109/TED.2020.3039224
[19] Dong M L, Yang W H 2024 2024 3rd International Symposium on Semiconductor and Electronic Technology Xi'an, China, August 23–25, 2024 p315
[20] Yang W H, Wang C L, Yang J, Zhang Q, Su L 2021 Microelectron. Reliab. 118 114048 doi: 10.1016/j.microrel.2021.114048