2010 Volume 27 Issue 6
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XU Yue, VAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. 2010: Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory, Chinese Physics Letters, 27(6): 164-166. doi: 10.1088/0256-307X/27/6/067201
Citation: XU Yue, VAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. 2010: Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory, Chinese Physics Letters, 27(6): 164-166. doi: 10.1088/0256-307X/27/6/067201

Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory

  • Available Online: 30/06/2010
  • Fund Project: the National Basic Research Program of China under Grant 2010CB934200
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory

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