XU Yue, VAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. 2010: Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory, Chinese Physics Letters, 27(6): 164-166. doi: 10.1088/0256-307X/27/6/067201
Citation: |
XU Yue, VAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. 2010: Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory, Chinese Physics Letters, 27(6): 164-166. doi: 10.1088/0256-307X/27/6/067201
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Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory
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Department of Physics,Nanjing University,Nanjing 210093;College of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003
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Semiconductor Manufacturing International(Shanghai)Corporation,Shanghai,201203
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Department of Physics,Nanjing University,Nanjing 210093
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Available Online:
30/06/2010
- Fund Project:
the National Basic Research Program of China under Grant 2010CB934200
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