2010 Volume 27 Issue 8
Article Contents

ZHANG Xian-Gao, CHEN Kun-Ji, FANG Zhong-Hui, QIAN Xin-Ye, LIU Guang-Yuan, JIANG Xiao-Fan, MA Zhong-Yuan, XU Jun, HUANG Xin-Fan, JI Jian-Xin, HE Fei, SONG Kuang-Bao, ZHANG Jun, WAN Hui, WANG Rong-Hua. 2010: Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment, Chinese Physics Letters, 27(8): 180-182. doi: 10.1088/0256-307X/27/8/087301
Citation: ZHANG Xian-Gao, CHEN Kun-Ji, FANG Zhong-Hui, QIAN Xin-Ye, LIU Guang-Yuan, JIANG Xiao-Fan, MA Zhong-Yuan, XU Jun, HUANG Xin-Fan, JI Jian-Xin, HE Fei, SONG Kuang-Bao, ZHANG Jun, WAN Hui, WANG Rong-Hua. 2010: Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment, Chinese Physics Letters, 27(8): 180-182. doi: 10.1088/0256-307X/27/8/087301

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

  • Available Online: 30/08/2010
  • Fund Project: the National Basic Research Program of China under Grant No 2006CB932202,and the National Natural Science Foundation of China under Grant Nos 60721063 and 10974091
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

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