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2011 Volume 28 Issue 1

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CAO Dong-Sheng, LU Hai, CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou. 2011: A 1100+ V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination, Chinese Physics Letters, 28(1): 182-185. doi: 10.1088/0256-307X/28/1/017303

Citation:

CAO Dong-Sheng, LU Hai, CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou. 2011: A 1100+ V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination, Chinese Physics Letters, 28(1): 182-185. doi: 10.1088/0256-307X/28/1/017303

A 1100+ V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination

Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; National Key Laboratory of Monolithic Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016

Available Online: 30/01/2011
Fund Project: the National Basic Research Program of China under Grant No 2006CB921803 and 2010CB327504,the National Natural Science Foundation of China under Grant Nos 60825401,60806026,60936004 and 60721063,and the New Century Excellent Talent Project(NCET)of the Ministry of Education of China under Grant No 07-0417