Chinese Physics Letters

Search Advanced

PDF
Cite
Share

facebook

twitter

google

linkedin

2011 Volume 28 Issue 4

Article Contents

Previous Article Next Article

WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo. 2011: Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition, Chinese Physics Letters, 28(4): 227-230. doi: 10.1088/0256-307X/28/4/048102

Citation:

WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo. 2011: Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition, Chinese Physics Letters, 28(4): 227-230. doi: 10.1088/0256-307X/28/4/048102

Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition

Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083

Available Online: 30/04/2011
Fund Project: the Knowledge Innovation Project of the Chinese Academy of Sciences under Grant Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02,the National Natural Science Foundation of China under Grant Nos 60890193 and 60906006,and the National Basic Research Program of China under Grant Nos 2006CB604905 and 2010CB327503