Chinese Physics Letters

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2012 Volume 29 Issue 12

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LIU Hong-Xia, MA Fei. 2012: Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric, Chinese Physics Letters, 29(12): 181-184. doi: 10.1088/0256-307X/29/12/127301

Citation:

LIU Hong-Xia, MA Fei. 2012: Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric, Chinese Physics Letters, 29(12): 181-184. doi: 10.1088/0256-307X/29/12/127301

Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric

Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education,Xidian University, Xi'an 710071

Available Online: 30/12/2012
Fund Project: the National Natural Science Foundation of China under Grant Nos 60976068,61076097 and 60936005,and the Fundamental Research Funds for the Central Universities (20110203110012)