Chinese Physics Letters

Search Advanced

PDF
Cite
Share

facebook

twitter

google

linkedin

2012 Volume 29 Issue 3

Article Contents

Previous Article Next Article

ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. 2012: An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector, Chinese Physics Letters, 29(3): 235-238. doi: 10.1088/0256-307X/29/3/038104

Citation:

ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. 2012: An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector, Chinese Physics Letters, 29(3): 235-238. doi: 10.1088/0256-307X/29/3/038104

An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ;United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 ;Graduate University of the Chinese Academy of Sciences, Beijing 100049
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050
United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203

Available Online: 30/12/2012
Fund Project: the National Basic Research Program of China(2010CB934300,2011CB309602,2011CB932800)%the National Integrated Circuit Research Program of China(2009ZX02023-003)%the National Natural Science Foundation of China(60906004,60906003,61076121,61006087)%the Science and Technology Council of Shanghai(1052nm07000)