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2013 Volume 30 Issue 5

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XU Wei-Zong, FU Li-Hua, LU Hai, REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou. 2013: GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation, Chinese Physics Letters, 30(5): 140-143. doi: 10.1088/0256-307X/30/5/057303

Citation:

XU Wei-Zong, FU Li-Hua, LU Hai, REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou. 2013: GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation, Chinese Physics Letters, 30(5): 140-143. doi: 10.1088/0256-307X/30/5/057303

GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093

Available Online: 30/12/2013
Fund Project: the National Basic Research Program of China under Grant Nos 2010CB327504,2011CB922100 and 2011CB301900,the National Natural Science Foundation of China under Grant Nos 60936004 and 11104130,the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011556 and BK2011050,and the Priority Academic Program Development of Jiangsu Higher Education Institutions