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2015 Volume 32 Issue 3
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KONG Xiang-Ting, ZHOU Xu-Liang, LI Shi-Yan, QIAO Li-Jun, LIU Hong-Gang, WANG Wei, PAN Jiao-Qing. 2015: High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD, Chinese Physics Letters, 32(3): 121-123. doi: 10.1088/0256-307X/32/3/037301
Citation: KONG Xiang-Ting, ZHOU Xu-Liang, LI Shi-Yan, QIAO Li-Jun, LIU Hong-Gang, WANG Wei, PAN Jiao-Qing. 2015: High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD, Chinese Physics Letters, 32(3): 121-123. doi: 10.1088/0256-307X/32/3/037301
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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD

  • Available Online: 30/12/2015
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD

  • Available Online: 30/12/2015

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