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Yin Tang, Qing Cai, Lian-Hong Yang, Ke-Xiu Dong, Dun-Jun Chen, Hai Lu, Rong Zhang, You-Dou Zheng. 2017: High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions, Chinese Physics Letters, 34(1): 137-140. doi: 10.1088/0256-307X/34/1/018502
Citation: Yin Tang, Qing Cai, Lian-Hong Yang, Ke-Xiu Dong, Dun-Jun Chen, Hai Lu, Rong Zhang, You-Dou Zheng. 2017: High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions, Chinese Physics Letters, 34(1): 137-140. doi: 10.1088/0256-307X/34/1/018502
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High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

  • Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing 210093

  • Department of Physics, Changji College, Changji 831100

  • School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou 239000

  • Available Online: 30/12/2017
  • Fund Project: the State Key Project of Research and Development Plan of China under Grant No 2016YFB0400903,the National Natural Science Foundation of China under Grant Nos 61634002,61274075 and 61474060,the Key Project of Jiangsu Province under Grant No BE2016174,the Anhui University Natural Science Research Project under Grant No KJ2015A153,and the Open Fund of State KeyLab of Optical Technologies on Nano-fabrication and Micro-engineering
  • It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields.To take full advantage of the polarization electric field,we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions.The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field.Furthermore,the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region.Meanwhile,a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.
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High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

  • Available Online: 30/12/2017

Abstract: It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields.To take full advantage of the polarization electric field,we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions.The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field.Furthermore,the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region.Meanwhile,a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

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