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2018 Volume 35 Issue 5
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Li-Hua Dai, Da-Wei Bi, Zheng-Xuan Zhang, Xin Xie, Zhi-Yuan Hu, Hui-Xiang Huang, Shi-Chang Zou. 2018: Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Chinese Physics Letters, 35(5): 78-81. doi: 10.1088/0256-307X/35/5/056101
Citation: Li-Hua Dai, Da-Wei Bi, Zheng-Xuan Zhang, Xin Xie, Zhi-Yuan Hu, Hui-Xiang Huang, Shi-Chang Zou. 2018: Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Chinese Physics Letters, 35(5): 78-81. doi: 10.1088/0256-307X/35/5/056101
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Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

  • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;University of Chinese Academy of Sciences, Beijing 100049

  • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

  • Information Engineering College, Jimei University, Fujian 361021

  • Available Online: 01/01/2018
  • Fund Project: the National Natural Science Foundation of China under Grant No 61504047,and the Fujian Provincial Department of Science and Technology under Grant No 2016J05159
  • We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SOI) wafers under different Si ion implantation conditions.It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device.It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

  • Available Online: 01/01/2018

Abstract: We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SOI) wafers under different Si ion implantation conditions.It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device.It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.

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