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2011 Volume 19 Issue 7
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2011: The p recombination layer in tunnel junctions for micromorph tandem solar cells, Chinese Physics B, 20(7): 078402.1. doi: 10.1088/1674-1056/20/7/078402
Citation: 2011: The p recombination layer in tunnel junctions for micromorph tandem solar cells, Chinese Physics B, 20(7): 078402.1. doi: 10.1088/1674-1056/20/7/078402
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The p recombination layer in tunnel junctions for micromorph tandem solar cells

  • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China

  • Fund Project: ^A国家重点基础研究发展计划(973计划)^B2006CB202604^D1%^Athe Knowledge Innovation Program of Chinese Academy of Sciences^B1KGCX2-YW-383-1^D2%^A国家高技术研究发展计划(863计划)^BSQ2010AA0521758001^D3
  • A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells.We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n-i-p tandem solar cells.The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated.The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic,and the resistance of the tunnel recombination junction can be as low as 1.5 Ω.cm2 by using the optimized p-a-Si:H recombination layer.We obtain tandem solar cells with open circuit voltage Voc = 1.4 V,which is nearly the sum of the Vocs of the two corresponding single cells,indicating no Voc losses at the tunnel recombination junction.
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通讯作者: 陈斌, bchen63@163.com
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The p recombination layer in tunnel junctions for micromorph tandem solar cells

Abstract: A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells.We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n-i-p tandem solar cells.The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated.The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic,and the resistance of the tunnel recombination junction can be as low as 1.5 Ω.cm2 by using the optimized p-a-Si:H recombination layer.We obtain tandem solar cells with open circuit voltage Voc = 1.4 V,which is nearly the sum of the Vocs of the two corresponding single cells,indicating no Voc losses at the tunnel recombination junction.

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