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2012 Volume 21 Issue 8
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Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen. 2012: Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer, Chinese Physics B, 21(8): 570-573. doi: 10.1088/1674-1056/21/8/088502
Citation: Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen. 2012: Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer, Chinese Physics B, 21(8): 570-573. doi: 10.1088/1674-1056/21/8/088502
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Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

  • School of Microelectronics,Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices,Xidian University,Xi'an 710071,China

  • Available Online: 30/12/2012
  • Fund Project: the National Natural Science Foundation of China(Grant 60876061)%the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute,China(Grant 20090C1403)
  • In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC =28.6 mA (JC =183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance (Rsp-on) is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7× 10 3 Ω·cm2 and 150 Ω/□,respectively.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

  • Available Online: 30/12/2012

Abstract: In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC =28.6 mA (JC =183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance (Rsp-on) is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7× 10 3 Ω·cm2 and 150 Ω/□,respectively.

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