Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang. 2013: High sensitivity Hall devices with AlSb/InAs quantum well structures, Chinese Physics B, 22(5): 453-455. doi: 10.1088/1674-1056/22/5/057106
| Citation: |
Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang. 2013: High sensitivity Hall devices with AlSb/InAs quantum well structures, Chinese Physics B, 22(5): 453-455. doi: 10.1088/1674-1056/22/5/057106
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High sensitivity Hall devices with AlSb/InAs quantum well structures
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Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Available Online:
30/12/2013
- Fund Project:
the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant ISCAS2009T04)%the National Natural Science Foundation of China(Grant .61204012 and 61274049)%the Beijing Natural Science Foundation,China(Grant 2112040)%the Beijing Nova Program,China(Grant 2010B056)
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