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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
- Available Online: 30/12/2014
Abstract:
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本系统由 北京仁和汇智信息技术有限公司 开发 技术支持： info@rhhz.net
本系统由 北京仁和汇智信息技术有限公司 开发 技术支持： info@rhhz.net
| Citation: |
He Chao, Liu Zhi, Zhang Xu, Huang Wen-Qi, Xue Chun-Lai, Cheng Bu-Wen. 2014: Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, Chinese Physics B, 23(11): 427-430. doi: 10.1088/1674-1056/23/11/116103
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Abstract:
He Chao, Liu Zhi, Zhang Xu, Huang Wen-Qi, Xue Chun-Lai, Cheng Bu-Wen. 2014: Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, Chinese Physics B, 23(11): 427-430. doi: 10.1088/1674-1056/23/11/116103
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