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2017 Volume 26 Issue 4
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Hui Wang, Ning Wang, Ling-Li Jiang, Xin-Peng Lin, Hai-Yue Zhao, Hong-Yu Yu. 2017: A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates, Chinese Physics B, 26(4): 420-424. doi: 10.1088/1674-1056/26/4/047305
Citation: Hui Wang, Ning Wang, Ling-Li Jiang, Xin-Peng Lin, Hai-Yue Zhao, Hong-Yu Yu. 2017: A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates, Chinese Physics B, 26(4): 420-424. doi: 10.1088/1674-1056/26/4/047305
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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

  • Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;Shenzhen Key Laborary of the Third Generation Semiconductor, Shenzhen 518055, China

  • Available Online: 30/12/2017
  • Fund Project: "Efficient and Energy-Saving GaN on Si Power Devices" Research Fund(Grant KQCX20140522151322946)%the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen,China(Grant ZDSYS20140509142721434)%the "Key Technology Research of GaN on Si Power Devices" Research Fund(Grant JSGG20140729145956266)%the "Research of Low Cost Fabrication of GaN Power Devices and System Integration" Research Fund(Grant JCYJ201602261926390)
  • A novel enhancement-mode A1GaN/GaN high electron mobility transistor (HEMT) is proposed and studied.Specifically,several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness.In the case of the same gate length,the Vth will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

  • Available Online: 30/12/2017

Abstract: A novel enhancement-mode A1GaN/GaN high electron mobility transistor (HEMT) is proposed and studied.Specifically,several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness.In the case of the same gate length,the Vth will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

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