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2017 Volume 26 Issue 4
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Wei Mao, Hai-Yong Wang, Xiao-Fei Wang, Ming Du, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao. 2017: Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions, Chinese Physics B, 26(4): 425-432. doi: 10.1088/1674-1056/26/4/047306
Citation: Wei Mao, Hai-Yong Wang, Xiao-Fei Wang, Ming Du, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao. 2017: Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions, Chinese Physics B, 26(4): 425-432. doi: 10.1088/1674-1056/26/4/047306
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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

  • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

  • Xian Aerosemi Technology Co., LTD, Xi'an 710077, China

  • Available Online: 30/12/2017
  • Fund Project: the National Natural Science Foundation of China(Grant .61574112,61334002,61306017,61474091,and 61574110)%the Natural Science Basic Research Plan in Shaanxi Province of China(Grant 605119425012)
  • To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (RonA).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration (N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of RonA-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of RonA-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

  • Available Online: 30/12/2017

Abstract: To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (RonA).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration (N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of RonA-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of RonA-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.

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