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2017 Volume 26 Issue 4
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Kun Tang, Shu-Lin Gu, Jian-Dong Ye, Shun-Ming Zhu, Rong Zhang, You-Dou Zheng. 2017: Recent progress of the native defects and p-type doping of zinc oxide, Chinese Physics B, 26(4): 27-49. doi: 10.1088/1674-1056/26/4/047702
Citation: Kun Tang, Shu-Lin Gu, Jian-Dong Ye, Shun-Ming Zhu, Rong Zhang, You-Dou Zheng. 2017: Recent progress of the native defects and p-type doping of zinc oxide, Chinese Physics B, 26(4): 27-49. doi: 10.1088/1674-1056/26/4/047702
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Recent progress of the native defects and p-type doping of zinc oxide

  • School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China

  • Available Online: 30/12/2017
  • Fund Project: the State Key Program for Basic Research of China(Grant 2011CB302003)%the National Natural Science Foundation of China(Grant .61274058,61322403,61504057,and 61574075)%the Natural Science Foundation of Jiangsu Province,China(Grant .BK20130013 and BK20150585)%the Six Talent Peaks Project in Jiangsu Province,China(Grant 2014XXRJ001)
  • Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent (2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.
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Recent progress of the native defects and p-type doping of zinc oxide

  • Available Online: 30/12/2017

Abstract: Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent (2011-now) research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

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