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2017 Volume 26 Issue 8
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Bin Li, Shan-Jin Huang, Hai-Long Wang, Hua-Long Wu, Zhi-Sheng Wu, Gang Wang, Hao Jiang. 2017: Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow, Chinese Physics B, 26(8): 423-428. doi: 10.1088/1674-1056/26/8/087307
Citation: Bin Li, Shan-Jin Huang, Hai-Long Wang, Hua-Long Wu, Zhi-Sheng Wu, Gang Wang, Hao Jiang. 2017: Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow, Chinese Physics B, 26(8): 423-428. doi: 10.1088/1674-1056/26/8/087307
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Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

  • School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China

  • School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

  • State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

  • Available Online: 30/12/2017
  • Fund Project: the Science and Technology Major Project of Guangdong Province,China (Grant .2014B010119003 and 2015B010112001)
  • The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN Qw growth.The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition.From the fabricated Schottky-barrier PDs,it is found that the smaller the TEGa flow,the lower the reverse-bias leakage is.The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow.A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow.Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface,and less structural defects related non-radiative recombination centers formed in the MQWs.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

  • Available Online: 30/12/2017

Abstract: The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN Qw growth.The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition.From the fabricated Schottky-barrier PDs,it is found that the smaller the TEGa flow,the lower the reverse-bias leakage is.The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow.A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow.Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface,and less structural defects related non-radiative recombination centers formed in the MQWs.

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