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2018 Volume 27 Issue 8
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Xiahong Wang, Ping Li, Zhao Ran, Weidong Luo. 2018: Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films, Chinese Physics B, 27(8): 497-501. doi: 10.1088/1674-1056/27/8/087305
Citation: Xiahong Wang, Ping Li, Zhao Ran, Weidong Luo. 2018: Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films, Chinese Physics B, 27(8): 497-501. doi: 10.1088/1674-1056/27/8/087305
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Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films

  • Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

  • Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240, China;Collaborative Innovation Center of Advanced Microstructures, Nanjing 210046, China

  • Available Online: 01/01/2018
  • Fund Project: the National Natural Science Foundation of China (Grant . 11474197, U1632272, and 11521404)
  • We propose a new type of quantum spin Hall (QSH) insulator in chemically functionalized As (110) and Sb (110) film. According to first-principles calculations, we find that metallic As (110) and Sb (110) films become QSH insulators after being chemically functionalized by hydrogen (H) or halogen (Cl and Br) atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin–orbit coupling (SOC). The energy gap increases linearly with the increase of the SOC strengthλ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films

  • Available Online: 01/01/2018

Abstract: We propose a new type of quantum spin Hall (QSH) insulator in chemically functionalized As (110) and Sb (110) film. According to first-principles calculations, we find that metallic As (110) and Sb (110) films become QSH insulators after being chemically functionalized by hydrogen (H) or halogen (Cl and Br) atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin–orbit coupling (SOC). The energy gap increases linearly with the increase of the SOC strengthλ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.

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